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PTF080901F Fiches technique(PDF) 3 Page - Infineon Technologies AG

No de pièce PTF080901F
Description  LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz
PDF  10 Pages
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Fabricant  INFINEON [Infineon Technologies AG]
Site Internet  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

PTF080901F Fiches technique(HTML) 3 Page - Infineon Technologies AG

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Data Sheet
3
2004-04-05
PTF080901
-80
-70
-60
-50
-40
-30
-20
-10
0
43
45
47
49
51
Output Power (dBm), PEP
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
VDD = 28 V, IDQ = 650 mA, f1 = 959 MHz, f2 = 960 MHz
3rd Order
7th
5th
14
15
16
17
18
860
880
900
920
940
960
Frequency (MHz)
40
50
60
70
80
Output Pow er
Efficiency
Gain
Typical POUT, Gain & Efficiency (at P-1dB)
vs. Frequency
VDD = 28 V, IDQ = 650 mA
Typical Performance (cont.)
All published data at TCASE = 25°C unless otherwise indicated.
IM3 vs. Output Power at Selected Biases
VDD = 28 V, f1 = 959, f2 = 960 MHz
-60
-55
-50
-45
-40
-35
-30
-25
-20
39
41
43
45
47
49
51
Output Power (dBm), PEP
480 mA
820 mA
650 mA
Broadband Performance
VDD = 28 V, IDQ = 650 mA, POUT = 45 W
10
20
30
40
50
60
860
880
900
920
940
960
Frequency (MHz)
-15
-12
-9
-6
-3
0
Gain
Return Loss
Efficiency



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