STGW30M65DF2 datasheet(1/19 Pages) STMICROELECTRONICS

No de pièce	STGW30M65DF2

Description	Trench gate field-stop IGBT, M series 650 V, 30 A low loss

PDF	19 Pages

Scroll/Zoom	100%

Fabricant	STMICROELECTRONICS [STMicroelectronics]

Site Internet	http://www.st.com

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1 / 19 page

December 2015

DocID027768 Rev 3

1/19

This is information on a product in full production.

www.st.com

STGW30M65DF2,

STGWA30M65DF2

Trench gate field-stop IGBT, M series 650 V, 30 A low loss

Datasheet - production data

Figure 1: Internal schematic diagram

Features



6 µs of minimum short-circuit withstand time



VCE(sat) = 1.55 V (typ.) @ IC = 50 A



Tight parameters distribution



Safer paralleling



Low thermal resistance



Soft and very fast recovery antiparallel diode

Applications



Motor control



UPS



PFC

Description plur

These devices are IGBTs developed using an

advanced proprietary trench gate field-stop

structure. These devices are part of the M series

of IGBTs, which represent an optimum

compromise in performance to maximize the

efficiency of inverter systems where low-loss and

short-circuit capability are essential. Furthermore,

a positive VCE(sat) temperature coefficient and tight

parameter distribution result in safer paralleling

operation.

Table 1: Device summary

Order code

Marking

Package

Packaging

STGW30M65DF2

G30M65DF2

TO-247

Tube

STGWA30M65DF2

G30M65DF2

TO-247 long leads

Tube

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STGW30M65DF2 Fiches technique(PDF) 1 Page - STMicroelectronics

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