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STPSC16H065CT Fiches technique(PDF) 3 Page - STMicroelectronics

No de pièce STPSC16H065CT
Description  650 V power Schottky silicon carbide diode
PDF  8 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPSC16H065CT Fiches technique(HTML) 3 Page - STMicroelectronics

  STPSC16H065CT Datasheet HTML 1Page - STMicroelectronics STPSC16H065CT Datasheet HTML 2Page - STMicroelectronics STPSC16H065CT Datasheet HTML 3Page - STMicroelectronics STPSC16H065CT Datasheet HTML 4Page - STMicroelectronics STPSC16H065CT Datasheet HTML 5Page - STMicroelectronics STPSC16H065CT Datasheet HTML 6Page - STMicroelectronics STPSC16H065CT Datasheet HTML 7Page - STMicroelectronics STPSC16H065CT Datasheet HTML 8Page - STMicroelectronics  
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STPSC16H065C
Characteristics
8
Table 5. Dynamic electrical characteristics (perdiode)
Symbol
Parameter
Test conditions
Typ.
Unit
Qcj
(1)
Total capacitive charge
VR = 400 V
23.5
nC
Cj
Total capacitance
VR = 0 V, Tc = 25 °C, F = 1 MHz
414
pF
VR = 400 V, Tc = 25 °C, F = 1 MHz
38
1.
Most accurate value for the capacitive charge:
Figure 1. Forward voltage drop versus forward
current (typical values, low level, per diode)
Figure 2. Forward voltage drop versus forward
current (typical values, high level, per diode)
Figure 3. Reverse leakage current versus
reverse voltage applied (typical values, per
diode)
Figure 4. Peak forward current versus case
temperature (per diode)



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