STPSC6H065DI datasheet(3/14 Pages) STMICROELECTRONICS

3 / 14 page

DocID023247 Rev 6

3/14

STPSC6H065

Characteristics

Table 5. Other parameters

Symbol

Parameter

Test conditions

Typ.

Unit

Qcj

(1)

Total capacitive charge

VR = 400 V

Total capacitance

VR = 0 V, Tc = 25 °C, F = 1 MHz

300

VR = 400 V, Tc = 25 °C, F = 1 MHz

Most accurate value for the capacitive charge: Q =

cj(vR).dvR

∫

VOUT

Figure 1. Forward voltage drop versus forward

current (typical values, low level)

Figure 2. Forward voltage drop versus forward

current (typical values, high level)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

Ta=150 °C

Ta=175 °C

Ta=25 °C

Pulse test : tp=500µs

Ta=100 °C

VF (V)

0.0

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

Ta=150 °C

Ta=175 °C

Ta=25 °C

Pulse test : tp=500µs

Ta=100 °C

VF (V)

Figure 3. Reverse leakage current versus

reverse voltage applied (typical values)

Figure 4. Peak forward current versus case

temperature (TO-220AC, DPAK, D²PAK)

R(µA)

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

100 150 200 250 300 350 400 450 500 550 600 650

j=25 °C

j=150 °C

j=175 °C

VR(V)

I M (A)

100

125

150

175

d = 0.1

d = 0.3

d = 0.5

d = 1

d = 0.7

TC(°C)

d=tp/T

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