BTS949 datasheet(3/11 Pages) INFINEON

3 / 11 page

02.12.1998

Semiconductor Group

Page 3

BTS 949

Electrical Characteristics

Parameter

Symbol

Unit

Values

max.

typ.

min.

at Tj=25°C, unless otherwise specified

Characteristics

Drain source clamp voltage

Tj = - 40 ...+ 150°C, ID = 10 mA

VDS(AZ)

IDSS

Off state drain current

VDS = 32 V, Tj = -40...+150 °C, VIN = 0 V

µA

1.7

2.2

VIN(th)

1.3

Input threshold voltage

ID = 3,9 mA

100

µA

IIN(1)

Input current - normal operation,

ID<ID(lim):

VIN = 10 V

400

Input current - current limitation mode,

ID=ID(lim):

VIN = 10 V

1000

IIN(2)

3000

IIN(3)

1500

Input current - after thermal shutdown,

ID=0 A:

VIN = 10 V

6000

IIN(H)

500

300

Input holding current after thermal shutdown

Tj = 25 °C

Tj = 150 °C

Ω

RDS(on)

On-state resistance

ID = 19 A, VIN = 5 V, Tj = 25 °C

ID = 19 A, VIN = 5 V, Tj = 150 °C

On-state resistance

ID = 19 A, VIN = 10 V, Tj = 25 °C

ID = 19 A, VIN = 10 V, Tj = 150 °C

RDS(on)

ID(ISO)

Nominal load current (ISO 10483)

VIN = 10 V, VDS = 0.5 V, TC = 85 °C

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