STB80N4F6AG datasheet(1/15 Pages) STMICROELECTRONICS

No de pièce	STB80N4F6AG

Description	High avalanche ruggedness

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

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November 2015

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This is information on a product in full production.

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STB80N4F6AG

Automotive-grade N-

Channel 40 V, 5.5 mΩ typ.,80 A

STripFET™ F6 Power MOSFET in a D²PAK package

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

VDS

RDS(on) max.

ID

STB80N4F6AG

40 V

6 mΩ

80 A



Designed for automotive applications and

AEC-Q101 qualified



Very low on-resistance



Very low gate charge



High avalanche ruggedness



Low gate drive power loss

Applications



Switching applications

Description

This device is an N-channel Power MOSFET

developed using the STripFET™ F6 technology

with a new trench gate structure. The resulting

Power MOSFET exhibits very low RDS(on) in all

packages.

Table 1: Device summary

Order code

Marking

Package

Packaging

STB80N4F6AG

80N4F6

D²PAK

Tape and Reel

1

3

TAB

D2PAK

AM01475v1_Tab

D(2, TAB)

G(1)

S(3)

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