37N60DM2 datasheet(1/15 Pages) STMICROELECTRONICS

No de pièce	37N60DM2

Description	Extremely low gate charge and input capacitance

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

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August 2015

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STB37N60DM2AG

Automotive-grade N-

channel 600 V, 0.094 Ω typ., 28 A

MDmesh™ DM2 Power MOSFET in a D²PAK package

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

VDS

RDS(on) max.

ID

PTOT

STB37N60DM2AG

600 V

0.110

Ω

28 A

210 W



Designed for automotive applications and

AEC-Q101 qualified



Fast-recovery body diode



Extremely low gate charge and input

capacitance



Low on-resistance



100% avalanche tested



Extremely high dv/dt ruggedness



Zener-protected

Applications



Switching applications

Description

This high voltage N-channel Power MOSFET is

part of the MDmesh™ DM2 fast recovery diode

series. It offers very low recovery charge (Qrr)

and time (trr) combined with low RDS(on), rendering

it suitable for the most demanding high efficiency

converters and ideal for bridge topologies and

ZVS phase-shift converters.

Table 1: Device summary

Order code

Marking

Package

Packing

STB37N60DM2AG

37N60DM2

D²PAK

Tape and reel

1

3

TAB

D2PAK

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37N60DM2 Fiches technique(PDF) 1 Page - STMicroelectronics

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