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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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BSP320 Fiches technique(PDF) 1 Page - Infineon Technologies AG |
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BSP320 Fiches technique(HTML) 1 Page - Infineon Technologies AG |
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1 / 8 page  Data Sheet 1 05.99 SIPMOS ® Small-Signal-Transistor Product Summary Drain source voltage VDS 60 V Drain-Source on-state resistance RDS(on) 0.12 Ω Continuous drain current ID 2.9 A Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated VPS05163 1 2 3 4 Type Package Ordering Code BSP320S SOT-223 Q67000-S4001 Pin 1 Pin 2/4 Pin 3 G D S Maximum Ratings , at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Unit Value A ID 2.9 Continuous drain current Pulsed drain current TA = 25 ˚C IDpulse 11.6 EAS 60 Avalanche energy, single pulse ID = 2.9 A, VDD = 25 V, RGS = 25 Ω mJ A 2.9 IAR Avalanche current,periodic limited by Tjmax Avalanche energy, periodic limited by Tjmax 0.18 EAR mJ d v/dt 6 Reverse diode d v/dt IS = 2.9 A, VDS = 20 V, di/dt = 200 A/µs, Tjmax = 150 ˚C kV/µs V Gate source voltage VGS ±20 Power dissipation TA = 25 ˚C Ptot 1.8 W Operating temperature Tj -55 ... +150 ˚C Storage temperature Tstg -55 ... +150 IEC climatic category; DIN IEC 68-1 55/150/56 BSP 320S |
Numéro de pièce similaire - BSP320 |
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Description similaire - BSP320 |
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