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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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DMHC4035LSD Fiches technique(PDF) 3 Page - Diodes Incorporated |
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DMHC4035LSD Fiches technique(HTML) 3 Page - Diodes Incorporated |
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3 / 9 page  DMHC4035LSD Document number: DS36287 Rev. 1 - 2 3 of 9 www.diodes.com January 2014 © Diodes Incorporated DMHC4035LSD Electrical Characteristics N-CHANNEL (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BVDSS 40 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS — — 1 μA VDS = 40V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(th) 1 — 3 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) — 26 45 mΩ VGS = 10V, ID = 3.9A — 35 58 VGS = 4.5V, ID = 3.5A Diode Forward Voltage VSD — 0.7 1 V VGS = 0V, IS = 1.25A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Ciss — 574 — pF VDS = 20V, VGS = 0V, f = 1MHz Output Capacitance Coss — 87.8 — Reverse Transfer Capacitance Crss — 38.7 — Gate resistance Rg — 1.6 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 4.5V) Qg — 5.9 — nC VDS = 20V, ID = 3.9A Total Gate Charge (VGS = 10V) Qg — 12.5 — Gate-Source Charge Qgs — 1.7 — Gate-Drain Charge Qgd — 2.2 — Turn-On Delay Time tD(on) — 3.1 — ns VDD = 20V, VGS = 10V, RL = 20Ω, RG = 6Ω, Turn-On Rise Time tr — 2.6 — Turn-Off Delay Time tD(off) — 15 — Turn-Off Fall Time tf — 5.5 — Reverse Recovery Time trr — 6.5 — ns IF = 3.9A, di/dt = 500A/μs Reverse Recovery Charge Qrr — 1.2 — nC Electrical Characteristics P-CHANNEL (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BVDSS -40 — — V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current IDSS — — -1 μA VDS = -40V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(th) -1 — -3 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS (ON) — 49 65 mΩ VGS = -10V, ID = -4.2A — 73 100 VGS = -4.5V, ID = -3.3A Diode Forward Voltage VSD — -0.7 -1.2 V VGS = 0V, IS = -1A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Ciss — 587 — pF VDS = -20V, VGS = 0V, f = 1MHz Output Capacitance Coss — 88.1 — pF Reverse Transfer Capacitance Crss — 40.2 — pF Gate resistance Rg — 12.3 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = -4.5V) Qg — 5.4 — nC VDS = -20V, ID = -4.2A Total Gate Charge (VGS = -10V) Qg — 11.1 — nC Gate-Source Charge Qgs — 1.5 — nC Gate-Drain Charge Qgd — 2 — nC Turn-On Delay Time tD(on) — 3.6 — ns VDD = -15V, VGS = -10V, RG = 6Ω, ID = -1A Turn-On Rise Time tr — 2.9 — ns Turn-Off Delay Time tD(off) — 36.3 — ns Turn-Off Fall Time tf — 15.3 — ns Reverse Recovery Time trr — 15.5 — ns IF = -4.2A, di/dt = 500A/μs Reverse Recovery Charge Qrr — 16.9 — nC Notes: 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. |
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