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DMHC3025LSDQ-13 Fiches technique(PDF) 7 Page - Diodes Incorporated

No de pièce DMHC3025LSDQ-13
Description  30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE
PDF  9 Pages
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Fabricant  DIODES [Diodes Incorporated]
Site Internet  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMHC3025LSDQ-13 Fiches technique(HTML) 7 Page - Diodes Incorporated

  DMHC3025LSDQ-13 Datasheet HTML 1Page - Diodes Incorporated DMHC3025LSDQ-13 Datasheet HTML 2Page - Diodes Incorporated DMHC3025LSDQ-13 Datasheet HTML 3Page - Diodes Incorporated DMHC3025LSDQ-13 Datasheet HTML 4Page - Diodes Incorporated DMHC3025LSDQ-13 Datasheet HTML 5Page - Diodes Incorporated DMHC3025LSDQ-13 Datasheet HTML 6Page - Diodes Incorporated DMHC3025LSDQ-13 Datasheet HTML 7Page - Diodes Incorporated DMHC3025LSDQ-13 Datasheet HTML 8Page - Diodes Incorporated DMHC3025LSDQ-13 Datasheet HTML 9Page - Diodes Incorporated  
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DMHC3025LSDQ
Document number: DS37220 Rev. 1 - 2
7 of 9
www.diodes.com
May 2014
© Diodes Incorporated
DMHC3025LSDQ
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
0
-50 -25
0
25
50
75
100 125
150
T , JUNCTION TEMPERATURE ( C)
J
°
Figure 18 On-Resistance Variation with Temperature
V= -10V
I=
A
GS
D
-10
V=
5V
I=
A
GS
D
-4.
-5
0.5
1.0
1.5
2.0
2.5
3.0
0
-50 -25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
Figure 19 Gate Threshold Variation vs. Ambient Temperature
A
-I = 1mA
D
-I = 250µA
D
0
0.3
0.6
0.9
1.2
1.5
10
15
20
0
5
-V , SOURCE-DRAIN VOLTAGE (V)
Figure 20 Diode Forward Voltage vs. Current
SD
T= -55 C
A
°
T= 25 C
A
°
T= 85 C
A
°
T= 125 C
A
°
T= 150 C
A
°
1,000
10
100
0
5
10
15
20
25
30
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 21 Typical Junction Capacitance
DS
Coss
Crss
f = 1MHz
Ciss
Q , TOTAL GATE CHARGE (nC)
Figure 22 Gate-Charge Characteristics
g
0
2
4
6
8
10
V
= -15V
I= -6A
DS
D



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