MBRS3100P datasheet(2/4 Pages) ONSEMI

2 / 4 page

MBRS3100P

www.onsemi.com

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

100

Average Rectified Forward Current

(At Rated VR, TL = 100°C)

IF(AV)

3.0

Nonrepetitive Peak Surge Current

(Surge applied at rated load conditions halfwave, single phase, 60 Hz)

IFSM

130

Operating Junction Temperature Range (Note 1)

− 65 to +175

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction−to−Lead

RqJL

°C/W

ELECTRICAL CHARACTERISTICS

Characteristic

Symbol

Value

Unit

Maximum Instantaneous Forward Voltage (Note 2)

(iF = 3.0 A, TJ = 25°C)

(iF = 6.0 A, TJ = 25°C)

(iF = 3.0 A, TJ = 125°C)

(iF = 6.0 A, TJ = 125°C)

0.79

0.90

0.62

0.70

Maximum Instantaneous Reverse Current (Note 2)

(Rated dc Voltage, TJ = 25°C)

(Rated dc Voltage, TJ = 125°C)

0.2

5.0

2. Pulse Test: Pulse Width = 300

ms, Duty Cycle ≤ 2.0%.

MBRS3100P Fiches technique(PDF) 2 Page - ON Semiconductor

MBRS3100P Fiches technique(HTML) 2 Page - ON Semiconductor

Html Pages

1 2 3 4

Fiches technique Télécharger

Lien URL