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MBR830MFS Fiches technique(PDF) 2 Page - ON Semiconductor

No de pièce MBR830MFS
Description  SWITCHMODE Power Rectifiers
PDF  4 Pages
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MBR830MFS Fiches technique(HTML) 2 Page - ON Semiconductor

  MBR830MFS Datasheet HTML 1Page - ON Semiconductor MBR830MFS Datasheet HTML 2Page - ON Semiconductor MBR830MFS Datasheet HTML 3Page - ON Semiconductor MBR830MFS Datasheet HTML 4Page - ON Semiconductor  
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MBR830MFS, NRVB830MFS
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
Unit
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
RθJC
−
2.0
°C/W
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
(iF = 8 Amps, TJ = 125°C)
(iF = 8 Amps, TJ = 25°C)
vF
0.44
0.50
0.57
0.70
V
Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
iR
15
0.020
50
0.200
mA
1. Pulse Test: Pulse Width = 300
ms, Duty Cycle ≤ 2.0%.
TYPICAL CHARACTERISTICS
0.1
1.0
10
100
0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.0
0.1
1
10
100
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
15
10
5
0
1.E−10
30
15
10
5
0
125
°C
150
°C
25
°C
−40
°C
125
°C
150
°C
25
°C
−40
°C
1.E−09
1.E−08
1.E−07
1.E−06
1.E−05
1.E−04
1.E−03
1.E−02
1.E−01
1.E+00
TA = 150°C
TA = 125°C
TA = 25°C
TA = −40°C
TA = 150°C
TA = 125°C
TA = 25°C
TA = −40°C
1.E−09
1.E−08
1.E−07
1.E−06
1.E−05
1.E−04
1.E−03
1.E−02
1.E−01
1.E+00
30
25
20
25
20



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