Applications

•

High frequency rectification (switching regulators, converters, choppers)

Features

•

Low switching noise

•

Low forward voltage (IF=2.0A, VF max=0.52V)

•

Ultrasmall package permitting applied sets to be small and slim (Mounting height 0.75mm)

Specifications

Parameter

Symbol

Conditions

Ratings

Unit

Repetitive Peak Reverse Voltage

VRRM

30

V

Nonrepetitive Peak Reverse Surge Voltage

VRSM

30

V

Average Output Current

I

O

2.0

A

1.5

A

Surge Forward Current

I

FSM

50Hz sine wave, 1 cycle

20

A

Junction Temperature

Tj

--55 to +125

°C

Storage Temperature

Tstg

--55 to +125

°C

Package Dimensions

unit : mm (typ)

7045-004

Ordering number : ENA0471A

Product & Package Information

• Package

: EMH8

• JEITA, JEDEC

: -

• Minimum Packing Quantity : 3,000 pcs./reel

Packing Type : TL

Marking

Electrical Connection

TL

1 : Anode1

2 : NC

3 : Anode2

4 : Anode2(NC)

5 : Cathode2

6 : Cathode2

7 : Cathode1

8 : Cathode1

EMH8

1

4

85

0.125

0.5

2.0

0.2

SBS818-TL-E

SD

Lot No.

23

4

1

76

5

8

*: Terminal 4 is used for the

purposes such as test. Al-

though it is connected to

Anode 2, please handle it

as NC Terminal.

91912 TKIM TC-00002809/51408SB TIIM TC-00001363 No. A0471-1/6

http://onsemi.com

Semiconductor Components Industries, LLC, 2013

September, 2013

SBS818

Schottky Barrier Diode

30V, 2A, Low VF, Non-Monolithic Dual EMH8 Common Cathode

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.