6AM13 datasheet(1/12 Pages) HITACHI

No de pièce	6AM13

Description	Silicon N-Channel/P-Channel Complementary Power MOS FET Array

PDF	12 Pages

Scroll/Zoom	100%

Fabricant	HITACHI [Hitachi Semiconductor]

Site Internet	http://www.renesas.com/eng

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6AM13

Silicon N-Channel/P-Channel Complementary Power MOS FET

Array

ADE-208-1217 (Z)

1st. Edition

Mar. 2001

Application

High speed power switching

Features

• Low on-resistance

N-channel: R

DS(on) ≤ 0.075 , VGS

= 10 V, I

D = 5 A

P-channel: R

DS(on) ≤ 0.12 , VGS

= –10 V, I

D = –5 A

• Capable of 4 V gate drive

• Low drive current

• High speed switching

• High density mounting

• Suitable for H-bridged motor driver

Numéro de pièce similaire - 6AM13

Fabricant	No de pièce	Fiches technique	Description
Hitachi Semiconductor	6AM14	62Kb / 7P	Silicon N-Channel/P-Channel Power MOS FET Array
Hitachi Semiconductor	6AM15	236Kb / 14P	Silicon N/P Channel MOS FET High Speed Power Switching

Fabricant	No de pièce	Fiches technique	Description
Hitachi Semiconductor	4AJ11	35Kb / 6P	Silicon P-Channel Power MOS FET Array
	4AK15	49Kb / 9P	Silicon N-Channel Power MOS FET Array
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	4AK21	36Kb / 6P	Silicon N-Channel Power MOS FET Array
	4AK22	36Kb / 6P	Silicon N-Channel Power MOS FET Array
	4AK25	39Kb / 6P	Silicon N-Channel Power MOS FET Array
	4AM11	125Kb / 10P	Silicon N-Channel/P-Channel Power MOS FET Array
	6AM14	62Kb / 7P	Silicon N-Channel/P-Channel Power MOS FET Array
	4AM15	59Kb / 6P	Silicon N-Channel/P-Channel Power MOS FET Array
	4AM13	122Kb / 10P	Silicon N-Channel/P-Channel Power MOS FET Array