ACE9060M datasheet(1/7 Pages) ACE

No de pièce	ACE9060M

Description	N-Channel 60-V MOSFET

PDF	7 Pages

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Fabricant	ACE [ACE Technology Co., LTD.]

Site Internet	http://www.ace-ele.com

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ACE9060M

N-Channel 60-V MOSFET

VER 1.1

1

Description

ACE9060M uses advanced trench technology to provide excellent RDS(ON).

This device particularly suits for low voltage application such as power management of desktop

computer or notebook computer power management, DC/DC converter.

Features

• Low r

DS(on) trench technology

• Low thermal impedance

• Fast switching speed

Applications:

• Automotive Systems

• DC/DC Conversion Circuits

• Battery Powered Power Tools

Absolute Maximum Ratings

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

60

V

Gate-Source Voltage

VGS

±20

Continuous Drain Current

a

TC=25°C

ID

90

A

Pulsed Drain Current

b

IDM

240

Continuous Source Current (Diode Conduction)

a

IS

90

A

Power Dissipation

a

TC=25°C

PD

300

W

Operating Junction and Storage Temperature Range TJ, Tstg

-55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol Maximum Unit

Maximum Junction-to-Ambient

RθJA

62.5

°C/W

Maximum Junction-to-Case

RθJC

1

Notes

A .Package Limited.

B. Pulse width limited by maximum junction temperature

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