ACE6344B datasheet(1/11 Pages) ACE

No de pièce	ACE6344B

Description	N and P-Channel Enhancement Mode MOSFET

PDF	11 Pages

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Fabricant	ACE [ACE Technology Co., LTD.]

Site Internet	http://www.ace-ele.com

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ACE6344B

N&P-Channel Enhancement Mode MOSFET

VER 1.1

1

Description

The ACE634B uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

The complementary MOSFETs may be used to form a level

Features

 N-Channel

VDS(V)=20V, ID=3A,

RDS(ON) <65mΩ (VGS=4.5V)

<90

mΩ (V

GS=2.5V)

 P-Channel

VDS(V)=-20V, ID=-2.5A ,

RDS(ON) <110mΩ (VGS=-4.5V)

<140

mΩ (V

GS=-2.5V)

Absolute Maximum Ratings

(TA=25℃ Unless otherwise noted)

Parameter

Symbol

Typical

Unit

N-Channel P-Channel

Drain-Source Voltage

VDSS

20

-20

V

Gate-Source Voltage

VGSS

±12

V

Continuous Drain Current (TJ=150℃)

*AC

TA=25℃

ID

3

-2.5

A

TA=70℃

2.4

-2.2

Drain Current (pulse) * B

IDM

13

-13

A

Power Dissipation

TA=25℃

PD

1.15

W

TA=70℃

0.73

Operating temperature / Storage temperature TJ/ TSTG

-55 to 150

OC

Packaging Type

SOT-23-6L

Marking

2003

.

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