ACE1106M datasheet(1/7 Pages) ACE

No de pièce	ACE1106M

Description	N-Channel 60-V MOSFET

PDF	7 Pages

Scroll/Zoom	100%

Fabricant	ACE [ACE Technology Co., LTD.]

Site Internet	http://www.ace-ele.com

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ACE1106M

N-Channel 60-V MOSFET

VER 1.1

1

Description

ACE1106M uses advanced trench technology to provide excellent RDS(ON).

This device particularly suits for low voltage application such as power management of desktop

computer or notebook computer power management, DC/DC converter.

Features

• Low r

DS(on) trench technology

• Low thermal impedance

• Fast switching speed

Applications:

• White LED boost converters

• Automotive Systems

• Industrial DC/DC Conversion Circuits

Absolute Maximum Ratings

(TA = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

60

V

Gate-Source Voltage

VGS

±20

Continuous Drain Current

a

TA=25°C

ID

110

A

Pulsed Drain Current

b

IDM

390

Continuous Source Current (Diode Conduction)

a

IS

110

A

Power Dissipation

a

TA=25°C

PD

300

W

Operating Junction and Storage Temperature Range TJ, Tstg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol Maximum Unit

Maximum Junction-to-Ambient

RθJA

62.5

°C/W

Maximum Junction-to-Case

RθJC

0.5

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

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ACE1106M Fiches technique(PDF) 1 Page - ACE Technology Co., LTD.

ACE1106M Fiches technique(HTML) 1 Page - ACE Technology Co., LTD.

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