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MMDF4207 Fiches technique(PDF) 2 Page - ON Semiconductor |
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MMDF4207 Fiches technique(HTML) 2 Page - ON Semiconductor |
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2 / 11 page ![]() MMDF4207 http://onsemi.com 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Characteristics Symbol Maximum Unit Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1.0 MW) Gate−to−Source Voltage − Continuous VDSS VDGR VGS 20 12 ±12 V 1 Inch Square @ 10 seconds on FR−4 or G−10 PCB Thermal Resistance − Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current − Continuous @ TA = 25°C Drain Current − Continuous @ TA = 70°C Drain Current − Pulsed Drain Current (1) RTHJA PD ID ID IDM 62.5 2.0 16 7.8 5.7 40 °C/W Watts mW/°C A A A 1 Inch Square @ Steady State on FR−4 or G−10 PCB Thermal Resistance − Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current − Continuous @ TA = 25°C Drain Current − Continuous @ TA = 70°C Drain Current − Pulsed Drain Current (1) RTHJA PD ID ID IDM 98 1.28 10.2 6.2 4.6 35 °C/W Watts mW/°C A A A Minimum Pad @ Steady State on FR−4 or G−10 PCB Thermal Resistance − Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current − Continuous @ TA = 25°C Drain Current − Continuous @ TA = 70°C Drain Current − Pulsed Drain Current (1) RTHJA PD ID ID IDM 166 0.75 6.0 4.8 3.5 30 °C/W Watts mW/°C A A A Operating and Storage Temperature Range TJ, Tstg −55 to 150 °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 20 Vdc, VGS = 4.5 Vdc, Peak IL = 5.0 Apk, L = 40 mH, RG = 25 W) EAS 500 mJ Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. (1) Repetitive rating; pulse width limited by maximum junction temperature. |
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