MS2552 datasheet(1/4 Pages) MICROSEMI

No de pièce	MS2552

Description	RF & MICROWAVE TRANSISTORS

PDF	4 Pages

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Fabricant	MICROSEMI [Microsemi Corporation]

Site Internet	http://www.microsemi.com

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1 / 4 page

Microsemi

RF Products Division

140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855

Page 1

Copyright

 2000

MSC

1665.PDF 2001-01-20

MS2552

RF & MICROWAVE TRANSISTORS

PRODUCT PREVIEW

R F P R O D UCT S DI VI SI ON

DESCRI PTION

The MS2552 device is a high power pulsed transistor specifically

designed for DME/TACAN avionics applications.

This device is capable of withstanding an infinite load VSWR at any phase

angle under full rated conditions. Low RF thermal resistance and semi-

automatic bonding techniques ensure high reliability and product

consistency.

The MS2552 is housed in the industry-standard AMPAC

 metal/ceramic

hermetic package with internal input/output matching structures.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

KEY FEATU R ES

Refractory/Gold

Metallization

Emitter Ballasted

Ruggedized VSWR

∞ :1

Capability

Input/Output Matching

Overlay Geometry

Metal/Ceramic Hermetic

Package

POUT = 325 W Min.

GP = 6.7 dB Gain

APPLICATIONS/BENEFIT

APPLICATIONS/BENEFITS

SS

S

Avionics Applications

Applies only to rated RF amplifier operation

ABSOLUTE MAXIMUM RATINGS (TCASE = 25°°°°C)

Symbol

Parameter

Value

Unit

PDISS

Power Dissipation* (TC ≤ 100

°C)

880

W

IC

Device Current*

24

A

VCC

Collector-Supply Voltage*

55

V

TJ

Junction Temperature (Pulsed RF Operation)

250

°C

TSTG

Storage Temperature

-65 to +150

°C

THERMAL DATA

RTH(j-c)

Junction-Case Thermal Resistance

0.17

°C/W

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