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SIS782DN Fiches technique(PDF) 6 Page - Vishay Telefunken

No de pièce SIS782DN
Description  N-Channel 30 V (D-S) MOSFET with Schottky Diode
PDF  14 Pages
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Fabricant  TFUNK [Vishay Telefunken]
Site Internet  http://www.vishay.com
Logo TFUNK - Vishay Telefunken

SIS782DN Fiches technique(HTML) 6 Page - Vishay Telefunken

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6
Document Number: 67954
S11-1177-Rev. A, 13-Jun-11
Vishay Siliconix
SiS782DN
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation PD is based on TJ(max.)= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
11
22
33
44
55
0
25
50
75
100
125
150
T
C - Case Temperature (°C)
Package Limited
Power, Junction-to-Case
0
10
20
30
40
50
0
255075
100
125
150
T
C - Case Temperature (°C)
Power, Junction-to-Ambient
0.0
0.4
0.8
1.2
1.6
2.0
025
50
75
100
125
150
T
A - Ambient Temperature (°C)



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