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UT131G-6-AA3-R Fiches technique(PDF) 2 Page - Unisonic Technologies

No de pièce UT131G-6-AA3-R
Description  TRIAC LOGIC LEVEL
PDF  5 Pages
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Fabricant  UTC [Unisonic Technologies]
Site Internet  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT131G-6-AA3-R Fiches technique(HTML) 2 Page - Unisonic Technologies

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UT131
TRIAC
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R401-006.H
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Repetitive Peak Off-State Voltage (Note 2)
UT131-5
VDRM
500
V
UT131-6
600
V
UT131-8
800
V
RMS On-State Current, Full Sine Wave; Tlead≤51°C
IT(RMS)
1
A
Non-Repetitive Peak On-State Current
(Full Sine Wave; TJ=25℃ Prior to Surge)
t=20ms
ITSM
16
A
t=16.7ms
17.6
A
Circuit Fusing
t=10ms
I
2
t
1.28
A
2s
Repetitive Rate of Rise of On-State
Current after Triggering
ITM=1.5A, IG=0.2A, dIG/dt=0.2A/s
T2 + G +
dIT/dt
50
A/
s
T2 + G -
50
A/
s
T2 - G -
50
A/
s
T2 - G +
10
A/
s
Peak Gate Voltage
VGM
5
V
Peak Gate Current
IGM
2
A
Peak Gate Power
PGM
5
W
Average Gate Power (over any 20ms period)
PG(AV)
0.5
W
Junction Temperature
TJ
+125
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac
may switch to the on-state. The rate of rise of current should not exceed 3 A/μs.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Lead
Full Cycle
θJLEAD
60
K/W
Half Cycle
80
K/W
Junction to Ambient (Note)
θJA
150
K/W
Note: PCB mounted; lead length=4mm
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Gate Trigger Current
IGT
VD=12V, IT=0.1A
T2 + G +
0.4
3
mA
T2 + G -
1.3
3
mA
T2 – G -
1.4
5
mA
T2 – G +
3.8
7
mA
Latching Current
IL
VD=12V, IGT=0.1A
T2 + G +
1.2
5
mA
T2 + G -
4.0
8
mA
T2 – G -
1.0
5
mA
T2 – G +
2.5
8
mA
Holding Current
IH
VD=12V, IGT=0.1A
1.3
5
mA
On -State Voltage
VT
IT=2.0A
1.2
1.5
V
Gate Trigger Voltage
VGT
VD=12V, IT=0.1A
0.7
1.5
V
VD=400V, IT=0.1A, TJ=125℃
0.2
0.3
V
Off-State Leakage Current
ID
VD=VDRM(MAX), TJ=125℃
0.1
0.5
mA
DYNAMIC CHARACTERISTICS (TJ=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
Critical Rate of Rise of off-state Voltage
dVD/dt
VDM=67% VDRM(MAX), TJ=125℃
Exponential waveform, RGK=1kΩ
5
15
V/
s
Gate Controlled Turn-on Time
tGT
ITM=1.5A, VD=VDRM(MAX),
IG=0.1A dIG/dt=5A/s
2
s



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