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UD4606QG-S08-R Fiches technique(PDF) 3 Page - Unisonic Technologies

No de pièce UD4606QG-S08-R
Description  DUAL ENHANCEMENT MODE
PDF  10 Pages
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Fabricant  UTC [Unisonic Technologies]
Site Internet  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UD4606QG-S08-R Fiches technique(HTML) 3 Page - Unisonic Technologies

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UD4606Q
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 10
www.unisonic.com.tw
QW-R211-021.B
ABSOLUTE MAXIMUM RATINGS (TA = 25°С, unless otherwise specified)
N-CHANNEL
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note2)
ID
6.9
A
Pulsed Drain Current (Note2)
IDM
30
A
Power Dissipation
PD
2
W
Junction Temperature
TJ
+150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
P-CHANNEL
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 2)
ID
-6
A
Pulsed Drain Current (Note 2)
IDM
-30
A
Power Dissipation
PD
2
W
Junction Temperature
TJ
+150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Surface Mounted on 1in
2 pad area, t≤10sec
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction to Ambient (Note)
θJA
67
80
°С/W
Note: Surface Mounted on 1in
2 pad area, t≤10sec



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