UTM6016G-S08-R datasheet(2/6 Pages) UTC

2 / 6 page

UTM6016

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-A76.D



ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

TA=25°C

Continuous

VGS @ 10V (Note 1)

TA=70°C

6.4

Drain Current

Pulsed (Note 2)

IDM

Avalanche Current

IAS

Single Pulse Avalanche Energy (Note 3)

EAS

123

SOP-8

1.5

Power Dissipation (TA=25°C) (Note 4)

DFN-8(5×6)

1.92

Junction Temperature

-55~+150

°C

Storage Temperature Range

TSTG

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL CHARACTERISTICS (Note 1)

PARAMETER

SYMBOL

RATINGS

UNIT

SOP-8

Junction to Ambient

DFN-8(5×6)

θJA

°C/W

SOP-8

Junction to Case

DFN-8(5×6)

θJC

°C/W

Notes: 1. The data tested by surface mounted on a 1 inch

2 FR-4 board with 2OZ copper.

2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.

3. The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=3.85mH, IAS=8A.

4. The power dissipation is limited by 150°C junction temperature.

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