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UT4114G-S08-R Fiches technique(PDF) 3 Page - Unisonic Technologies

No de pièce UT4114G-S08-R
Description  N-CHANNEL JUNCTIN SILICON FET
PDF  4 Pages
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Fabricant  UTC [Unisonic Technologies]
Site Internet  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT4114G-S08-R Fiches technique(HTML) 3 Page - Unisonic Technologies

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UT4114
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 4
www.unisonic.com.tw
QW-R502-A78.b
ELECTRICAL CHARACTERISTICS (Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDS=10V, ID=10A
62
95
nC
VGS=4.5V, VDS=10V,
ID=10A
27.5
42
nC
Gate to Source Charge
QGS
8.0
nC
Gate to Drain Charge
QGD
6.0
nC
Gate Resistance
RG
f=1.0MHz
0.15
0.7
1.4
Ω
Turn-ON Delay Time
tD(ON)
VDD=10V, RL=2Ω, ID≈5A,
VGEN=4.5V, RG=1Ω
30
55
ns
Rise Time
tR
13
25
ns
Turn-OFF Delay Time
tD(OFF)
60
100
ns
Fall-Time
tF
30
55
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
TC=25°C
5.1
A
Maximum Body-Diode Pulsed Current
(Note 1)
ISM
50
A
Drain-Source Diode Forward Voltage
VSD
IS=2A
0.71
1.1
V
Notes: 1. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
2. Guaranteed by design, not subject to production testing.



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