 |
Moteur de recherche de fiches techniques de composants électroniques |
|
|
Moteur de recherche de fiches techniques de composants électroniques |
|
UT2P06G-AE3-R Fiches technique(PDF) 1 Page - Unisonic Technologies |
|
|
|||||||||||||||||||||||||||||
UT2P06G-AE3-R Fiches technique(HTML) 1 Page - Unisonic Technologies |
|
|
1 / 3 page  UNISONIC TECHNOLOGIES CO., LTD UT2P06 Power MOSFET www.unisonic.com.tw 1 of 3 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R502-B01.B -2A, 60V (D-S) P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT2P06 is a P-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON) and low gate charge. This UTC UT2P06 can be operated with -4.5V low gate voltage. FEATURES * RDS(ON)<0.4Ω @ VGS= -10V, ID= -0.9A RDS(ON)<0.6Ω @ VGS= -4.5V, ID= -0.8A * High switching speed * Low gate charge (Typ.=5.1 nC) SYMBOL ORDERING INFORMATION Ordering Number Package Pin Assignment Packing 1 2 3 UT2P06G-AE3-R SOT-23 S G D Tape Reel Note: Pin Assignment: S: Source G: Gate D: Drain MARKING 3 1 2P06G 2 |
Numéro de pièce similaire - UT2P06G-AE3-R |
|
Description similaire - UT2P06G-AE3-R |
|
|
|
Lien URL |
| ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Lien vers la fiche technique | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
French ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
