1N60G-AB3-R datasheet(1/7 Pages) UTC

No de pièce	1N60G-AB3-R

Description	N-CHANNEL ENHANCEMENT

PDF	7 Pages

Scroll/Zoom	100%

Fabricant	UTC [Unisonic Technologies]

Site Internet	http://www.utc-ic.com

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1 / 7 page

UNISONIC TECHNOLOGIES CO., LTD

1N60-KW

Power MOSFET

www.unisonic.com.tw

1 of 7

QW-R205-054.D

1A, 600V N-CHANNEL

POWER MOSFET



DESCRIPTION

The UTC 1N60-KW is a high voltage MOSFET and is

designed to have better characteristics, such as fast switching

time, low gate charge, low on-state resistance and have a high

rugged avalanche characteristics. This power MOSFET is usually

used at high speed switching applications in power supplies,

PWM motor controls, high efficient DC to DC converters and

bridge circuits.



FEATURES

* RDS(ON) < 15Ω @ VGS=10V, ID=0.5A

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness



SYMBOL



ORDERING INFORMATION

Ordering Number

Pin Assignment

Lead Free

Halogen Free

Package

1

2

3

Packing

-

1N60G-AA3-R

SOT-223

G

D

S

Tape Reel

-

1N60G-AB3-R

SOT-89

G

D

S

Tape Reel

1N60L-TM3-T

1N60G-TM3-T

TO-251

G

D

S

Tube

1N60L-TN3-R

1N60G-TN3-R

TO-252

G

D

S

Tape Reel

1N60L-T92-B

1N60G-T92-B

TO-92

G

D

S

Tape Box

1N60L-T92-K

1N60G-T92-K

TO-92

G

D

S

Bulk

Note: Pin Assignment: G: Gate

D: Drain

S: Source

Numéro de pièce similaire - 1N60G-AB3-R

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Unisonic Technologies	1N60G-AA3-R	282Kb / 6P	1.2A, 600V N-CHANNEL POWER MOSFET
Unisonic Technologies	1N60G-AA3-R	361Kb / 7P	N-CHANNEL POWER MOSFET

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