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4N65ZG-TN3-R Fiches technique(PDF) 1 Page - Unisonic Technologies |
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4N65ZG-TN3-R Fiches technique(HTML) 1 Page - Unisonic Technologies |
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1 / 6 page ![]() UNISONIC TECHNOLOGIES CO., LTD 4N65Z-E Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2013 Unisonic Technologies Co., Ltd QW-R502-995. A 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65Z-E is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications including power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) = 3.1Ω @ VGS=10V, ID=2.2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 4N65ZL- TF1-T 4N65ZG-TF1-T TO-220F1 G D S Tube 4N65ZL- TN3-T 4N65ZG-TN3-T TO-252 G D S Tube 4N65ZL- TN3-R 4N65ZG-TN3-R TO-252 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source |
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