UTT30N10G-TQ2-R datasheet(3/6 Pages) UTC

3 / 6 page

UTT30N10

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-661.F



ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=250µA, VGS=0V

100

Drain-Source Leakage Current

IDSS

VDS=100V, VGS=0V

µA

Gate- Source Leakage

Current

Forward

IGSS

VGS=+20V, VDS=0V

+100

Reverse

VGS=-20V, VDS=0V

-100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250µA

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=30A

39.5

mΩ

VGS=6V, ID=15A

39.2

mΩ

DYNAMIC PARAMETERS

Input Capacitance

CISS

VGS=0V, VDS=25V, f=1.0MHz

2590

Output Capacitance

COSS

144

Reverse Transfer Capacitance

CRSS

105

SWITCHING PARAMETERS

Turn-ON Time

tON

VDD=30V, ID=0.5A, VGS=10V,

RGS=25Ω

Turn-ON Delay Time

tD(ON)

Rise Time

780

Turn-OFF Delay Time

tD(OFF)

126

Total Gate Charge at 10V

VGS=10V, VDS=25V, ID=1.3A,

IG=100µA

Gate to Source Charge

QGS

Gate to Drain Charge

QGD

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

Maximum Body-Diode Pulsed Current

ISM

120

Drain-Source Diode Forward Voltage

VSD

ISD=30A

1.25

ISD=15A

1.0

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