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UT4812G-S08-R Fiches technique(PDF) 5 Page - Unisonic Technologies

No de pièce UT4812G-S08-R
Description  DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  6 Pages
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Fabricant  UTC [Unisonic Technologies]
Site Internet  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT4812G-S08-R Fiches technique(HTML) 5 Page - Unisonic Technologies

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UT4812
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
5 of 6
www.unisonic.com.tw
QW-R502-166.C
TYPICAL CHARACTERISTICS(Cont.)
VDS=15V
ID=6.9A
Capacitance Characteristics
Drain to Source Voltage,VDS (V)
Gate-Charge Characteristics
Gate Charge,QG (nC)
10
8
6
4
2
0
02
4
6
810
12
14
f=1MHZ
VGS=0V
COSS
CRSS
CISS
0
5
10
15
20
25
30
0
100
200
300
400
1000
900
800
700
600
500
1ms
10ms
0.1s
1s
10s
DC
100μs
10μs
RDS(ON) Limited
TJ(Max)=150℃
TA=25℃
100
10
1
0.1
0.1
1
10
100
Maximum Forward Biased Safe
Operating Area (Note E)
Drain to Source Voltage,VDS (V)
TJ(Max)=150℃
TA=25℃
40
30
20
10
0
0.001 0.01
0.1
1
10
100
1000
Pulse Width (s)
Single Pulse Power Rating Junction-
to-Ambient (Note E)
10
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Normalized Maximum Transient Thermal Impedance
In descending order
D=0.5,0.3,0.1,0.05,0.02,0.01,single pulse
D=TON/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5℃/W
PDM
TON
T
Single Pulse



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