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UT4810DG-S08-R Fiches technique(PDF) 1 Page - Unisonic Technologies |
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UT4810DG-S08-R Fiches technique(HTML) 1 Page - Unisonic Technologies |
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1 / 5 page ![]() UNISONIC TECHNOLOGIES CO., LTD UT4810D Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2015 Unisonic Technologies Co., Ltd VER.A N-CHANNEL 30-V (D-S) MOSFET WITH SCHOTTKY DIODE DESCRIPTION As trench FET Power MOSFETS, N-channel MOSFET with schottky diode, the UTC UT4810D shows fast switching and low gate charge features. And it can be used in such applications: DC-DC logic level, low voltage and battery powered. FEATURES * RDS(ON) < 13.5mΩ @ VGS=10V, ID=10A * RDS(ON) < 20mΩ @ VGS=4.5V, ID=5A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified SYMBOL 1.Gate 3.Source 2.Drain SOP-8 ORDERING INFORMATION Ordering Number Package Pin Assignment Packing 12 3 4 56 7 8 UT4810DG-S08-R SOP-8 S S S G D D D D Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source MARKING |
Numéro de pièce similaire - UT4810DG-S08-R |
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Description similaire - UT4810DG-S08-R |
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