10N60L-TQ2-R datasheet(1/9 Pages) UTC

1 / 9 page

UNISONIC TECHNOLOGIES CO., LTD

10N60

Power MOSFET

www.unisonic.com.tw

1 of 7

QW-R502-119.O

10A, 600V N-CHANNEL

POWER MOSFET



DESCRIPTION

The UTC 10N60 is a high voltage and high current power

MOSFET, designed to have better characteristics, such as fast

switching time, low gate charge, low on-state resistance and have

a high rugged avalanche characteristics. This power MOSFET is

usually used at high speed switching applications in power

supplies, PWM motor controls, high efficient DC to DC converters

and bridge circuits.



FEATURES

* RDS(ON) < 0.75Ω@VGS =10V

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability



SYMBOL

Numéro de pièce similaire - 10N60L-TQ2-R

Fabricant	No de pièce	Fiches technique	Description
Unisonic Technologies	10N60L-TQ2-R	398Kb / 8P	10A, 600V N-CHANNEL POWER MOSFET

Fabricant	No de pièce	Fiches technique	Description
Fairchild Semiconductor	FQA70N15	738Kb / 8P	N-Channel Power MOSFET
	FQA90N15	749Kb / 8P	N-Channel Power MOSFET
	SSF7N90A	249Kb / 8P	N-CHANNEL POWER MOSFET
	FQH90N15	1Mb / 10P	N-Channel Power MOSFET
Gunter Seniconductor Gm...	GFC224	100Kb / 1P	N Channel Power MOSFET
	GFC250	114Kb / 1P	N Channel Power MOSFET
	GFC254	114Kb / 1P	N Channel Power MOSFET
	GFC330	98Kb / 1P	N Channel Power MOSFET
ON Semiconductor	EMH2412-TL-H	550Kb / 7P	N-Channel Power MOSFET July, 2013
AiT Semiconductor Inc.	BSS123L	486Kb / 5P	MOSFET N-CHANNEL POWER MOSFET REV1.0