2N90G-TN3-R datasheet(3/7 Pages) UTC

3 / 7 page

2N90

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R502-478.E



ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage (Note 2)

VDSS

900

Gate-Source Voltage

VGSS

±30

Drain Current

Continuous

2.2

Pulsed (Note 2)

IDM

8.8

Avalanche Current (Note 2)

IAR

2.2

Avalanche Energy

Single Pulsed (Note 3)

EAS

170

Repetitive (Note 2)

EAR

8.5

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.0

V/ns

Power Dissipation

TO-220

TO-220F

TO-251/ TO-252

TO-252D

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. L = 65mH, IAS = 2.2A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

4. ISD ≤ 2.2A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C



THERMAL DATA

PARAMETER

PACKAGE

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220/TO-220F

θJA

62.5

°C/W

TO-251/ TO-252

TO-252D

110

Junction to Case

TO-220

θJC

1.47

°C/W

TO-220F

TO-251/ TO-252

TO-252D

2.85

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