2N80L-TM3-R datasheet(3/7 Pages) UTC

3 / 7 page

2N80

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R502-480.E



ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

800

Gate-Source Voltage

VGSS

±30

Avalanche Current (Note 2)

IAR

2.4

Drain Current

Continuous

2.4

Pulsed (Note 2)

IDM

9.6

Avalanche Energy

Single Pulsed (Note 3)

EAS

180

Repetitive (Note 2)

EAR

8.5

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.0

V/ns

Power Dissipation

TO-220F

TO-251/TO-252/TO-252D

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. L = 59mH, IAS = 2.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

4. ISD ≤ 2.4A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220F

θJA

62.5

°C/W

TO-251/TO-252/TO-252D

110

Junction to Case

TO-220F

θJC

5.2

°C/W

TO-251/TO-252/TO-252D

2.85

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