1N65G-AA3-R datasheet(1/7 Pages) UTC

No de pièce	1N65G-AA3-R

Description	N-CHANNEL POWER MOSFET

PDF	7 Pages

Scroll/Zoom	100%

Fabricant	UTC [Unisonic Technologies]

Site Internet	http://www.utc-ic.com

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UNISONIC TECHNOLOGIES CO., LTD

1N65

Power MOSFET

www.unisonic.com.tw

1 of 7

QW-R502-579.E

1.2A, 650V N-CHANNEL

POWER MOSFET



DESCRIPTION

The UTC 1N65 is a high voltage power MOSFET and is

designed to have better characteristics, such as fast switching

time, low gate charge, low on-state resistance and high rugged

avalanche characteristics. This power MOSFET is usually used in

the high speed switching applications of power supplies, PWM

motor controls, high efficient DC to DC converters and bridge

circuits.



FEATURES

* RDS(ON) <12.5Ω @ VGS=10V, ID=0.6A

* Ultra Low gate charge (typical 5.0nC)

* Low reverse transfer capacitance (CRSS = typical 3.0 pF)

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness



SYMBOL

TO-252

TO-220

1

TO-220F

SOT-223

1

TO-92

TO-126

1

DFN-8(5x6)

1

TO-251

1

TO-251L

1

Numéro de pièce similaire - 1N65G-AA3-R

Fabricant	No de pièce	Fiches technique	Description
Unisonic Technologies	1N65G-AA3-R	297Kb / 6P	1.2A, 650V N-CHANNEL POWER MOSFET

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1N65G-AA3-R Fiches technique(PDF) 1 Page - Unisonic Technologies

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