6N10G-TND-R datasheet(2/4 Pages) UTC

2 / 4 page

6N10

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R502-486.E



ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDS

100

Gate-Source Voltage

VGS

±20

Continuous Drain Current

Continuous

6.5

Pulsed

IDM

8.0

Repetitive Avalanche Energy

(Duty Cycle ≤1%)

L=0.1mH

EAR

1.25

Power Dissipation

SOT-223

2.2

TO-252/TO-252D

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55~+150

°C

Note : Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

SOT-223

θJA

°C/W

TO-252/TO-252D

100

Junction to Case

SOT-223

θJC

°C/W

TO-252/TO-252D

7.5

Note: θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal

reference is defined as the solder mounting surface of the drain pins.

θJC is guaranteed by design while θJA is determined by the user’s board deign.

6N10G-TND-R Fiches technique(PDF) 2 Page - Unisonic Technologies

6N10G-TND-R Fiches technique(HTML) 2 Page - Unisonic Technologies

Html Pages

1 2 3 4

Fiches technique Télécharger

Lien URL