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PESDXS2UT Fiches technique(PDF) 3 Page - NXP Semiconductors |
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PESDXS2UT Fiches technique(HTML) 3 Page - NXP Semiconductors |
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3 / 13 page ![]() 2004 Apr 15 3 NXP Semiconductors Product data sheet Double ESD protection diodes in SOT23 package PESDxS2UT series ORDERING INFORMATION LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Notes 1. Non-repetitive current pulse 8/20µ µs exponential decay waveform; see Fig.2. 2. Measured across either pins 1 and 3 or pins 2 and 3. TYPE NUMBER PACKAGE NAME DESCRIPTION VERSION PESD3V3S2UT − plastic surface mounted package; 3 leads SOT23 PESD5V2S2UT PESD12VS2UT PESD15VS2UT PESD24VS2UT SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Ppp peak pulse power 8/20 µs pulse; notes 1 and 2 PESD3V3S2UT − 330 W PESD5V2S2UT − 260 W PESD12VS2UT − 180 W PESD15VS2UT − 160 W PESD24VS2UT − 160 W Ipp peak pulse current 8/20 µs pulse; notes 1 and 2 PESD3V3S2UT − 18 A PESD5V2S2UT − 15 A PESD12VS2UT − 5 A PESD15VS2UT − 5 A PESD24VS2UT − 3 A Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C |
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