UT4422G-S08-R datasheet(1/6 Pages) UTC

No de pièce	UT4422G-S08-R

Description	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

PDF	6 Pages

Scroll/Zoom	100%

Fabricant	UTC [Unisonic Technologies]

Site Internet	http://www.utc-ic.com

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1 / 6 page

UNISONIC TECHNOLOGIES CO., LTD

UT4422

Power MOSFET

www.unisonic.com.tw

1 of 6

QW-R502-206.C

N-CHANNEL ENHANCEMENT

MODE FIELD EFFECT

TRANSISTOR



DESCRIPTION

The UT4422 uses advanced trench technology to provide

excellent RDS(ON), low gate charge and operation with low gate

voltages. This device is suitable for use as a load switch or in PWM

applications.



FEATURES

* RDS(ON) < 15 mΩ @ VGS =10V, ID =11A

RDS(ON) < 24 mΩ @ VGS =4.5 V, ID =10 A

* Low Capacitance

* Low Gate Charge

* Fast Switching Capability

* Avalanche Energy Specified



SYMBOL



ORDERING INFORMATION

Ordering Number

Package

Pin Assignment

Packing

12

3

456

7

8

UT4422G-S08-R

SOP-8

S

G

D

Tape Reel

Note: Pin Assignment: G: Gate

D: Drain

S: Source



MARKING

Numéro de pièce similaire - UT4422G-S08-R

Fabricant	No de pièce	Fiches technique	Description
Unisonic Technologies	UT4422G-S08-R	254Kb / 6P	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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UT4422G-S08-R Fiches technique(PDF) 1 Page - Unisonic Technologies

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