UT3418G-AE3-R datasheet(1/3 Pages) UTC

No de pièce	UT3418G-AE3-R

Description	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

PDF	3 Pages

Scroll/Zoom	100%

Fabricant	UTC [Unisonic Technologies]

Site Internet	http://www.utc-ic.com

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1 / 3 page

UNISONIC TECHNOLOGIES CO., LTD

UT3418

Power MOSFET

www.unisonic.com.tw

1 of 3

QW-R502-226.E

N-CHANNEL ENHANCEMENT

MODE FIELD EFFECT

TRANSISTOR



DESCRIPTION

The UT3418 uses advanced trench technology to provide

excellent RDS(ON), low gate charge and operation with low gate

voltages. This device is suitable for use as a load switch or in

PWM applications.



FEATURES

* RDS(ON) < 60mΩ @VGS = 10 V

* RDS(ON) < 70mΩ @VGS = 4.5 V

* RDS(ON) < 155mΩ @VGS = 2.5 V

* Low capacitance

* Low gate charge

* Fast switching capability

* Avalanche energy specified



SYMBOL

2.Gate

1.Source

3.Drain



ORDERING INFORMATION

Ordering Number

Package

Pin Assignment

Packing

1

2

3

UT3418G-AE3-R

SOT-23

S

G

D

Tape Reel

Note: Pin Assignment: G: Gate

D: Drain

S: Source



MARKING

Numéro de pièce similaire - UT3418G-AE3-R

Fabricant	No de pièce	Fiches technique	Description
Unisonic Technologies	UT3418G-AE3-R	149Kb / 3P	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
VBsemi Electronics Co.,...	UT3418G-AE3-R	492Kb / 9P	N-Channel 30-V (D-S) MOSFET

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UT3418G-AE3-R Fiches technique(PDF) 1 Page - Unisonic Technologies

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