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UT40N03TL-TN3-R Fiches technique(PDF) 2 Page - Unisonic Technologies |
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UT40N03TL-TN3-R Fiches technique(HTML) 2 Page - Unisonic Technologies |
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2 / 5 page ![]() UT40N03T Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 5 www.unisonic.com.tw QW-R502-172.G ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±25 V Continuous Drain Current ID 28 A Pulsed Drain Current IDM 95 A Total Power Dissipation TO-220/TO-263 PD 31.25 W TO-251/ TO-252 DFN-8(3×3) 41 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient TO-220/TO-263 θJA 62 °C/W TO-251/ TO-252 60 DFN-8(3×3) 65 Junction to Case TO-220/TO-263 θJC 4 °C/W TO-251/ TO-252 DFN-8(3×3) 3 |
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