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UT3N01ZG-AE2-R Fiches technique(PDF) 1 Page - Unisonic Technologies |
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UT3N01ZG-AE2-R Fiches technique(HTML) 1 Page - Unisonic Technologies |
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1 / 6 page ![]() UNISONIC TECHNOLOGIES CO., LTD UT3N01Z Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R502-285.I N-CHANNEL SILICON MOSFET GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS DESCRIPTION The UT3N01Z uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device’s general purpose is for switching device applications. FEATURES * RDS(ON) < 2.0Ω @ VGS=4V, ID=80mA RDS(ON) < 3.0Ω @ VGS=2.5V, ID=40mA RDS(ON) < 12.8Ω @ VGS=1.5V, ID=10mA * Ultra low gate charge ( typical 5 nC ) * Low reverse transfer capacitance ( CRSS = typical 7.5 pF ) * Fast switching capability * Enhanced ESD capability SYMBOL ORDERING INFORMATION Ordering Number Package Pin Assignment Packing 12345 6 UT3N01ZG-AE2-R SOT-23-3 S G D - - - Tape Reel UT3N01ZG-AL3-R SOT-323 S G D - - - Tape Reel UT3N01ZG-AN3-R SOT-523 S G D - - - Tape Reel UT3N01ZG-AL6-R SOT-363 S1 G1 D2 S2 G2 D1 Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source |
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Description similaire - UT3N01ZG-AE2-R |
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