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2N7002DWG-AL6-R Fiches technique(PDF) 1 Page - Unisonic Technologies |
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2N7002DWG-AL6-R Fiches technique(HTML) 1 Page - Unisonic Technologies |
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1 / 6 page ![]() UNISONIC TECHNOLOGIES CO., LTD 2N7002DW Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R502-534.D 300mA, 60V DUAL N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N7002DW uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low RDS(ON). * Voltage Controlled Small Signal Switch * Rugged and Reliable * High Saturation Current Capability SYMBOL ORDERING INFORMATION Ordering Number Package Pin Assignment Packing 12345 6 2N7002DWG-AL6-R SOT-363 S1 G1 D2 S2 G2 D1 Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source MARKING 3PG |
Numéro de pièce similaire - 2N7002DWG-AL6-R |
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Description similaire - 2N7002DWG-AL6-R |
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