UT3414G-AE3-R datasheet(1/4 Pages) UTC

No de pièce	UT3414G-AE3-R

Description	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

PDF	4 Pages

Scroll/Zoom	100%

Fabricant	UTC [Unisonic Technologies]

Site Internet	http://www.utc-ic.com

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1 / 4 page

UNISONIC TECHNOLOGIES CO., LTD

UT3414

Power MOSFET

www.unisonic.com.tw

1 of 4

QW-R502-248.F

N-CHANNEL ENHANCEMENT

MODE



DESCRIPTION

The UT3414 uses advanced trench technology to provide

excellent RDS(ON), low gate charge and operation with gate voltages

as low as 1.8V. This device is suitable for use as a load switch or in

PWM applications.



FEATURES

* RDS(ON) < 50mΩ @VGS = 4.5V

* RDS(ON) < 63mΩ @VGS = 2.5V

* RDS(ON) < 87mΩ @VGS = 1.8V

* Low capacitance

* Low gate charge

* Fast switching capability

* Avalanche energy specified



SYMBOL



ORDERING INFORMATION

Ordering Number

Package

Pin Assignment

Packing

1

2

3

UT3414G-AE3-R

SOT-23

S

G

D

Tape Reel

Note: Pin Assignment: G: Gate

D: Drain

S: Source



MARKING

Numéro de pièce similaire - UT3414G-AE3-R

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Unisonic Technologies	UT3414G-AE3-R	200Kb / 4P	N-CHANNEL ENHANCEMENT MODE

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UT3414G-AE3-R Fiches technique(PDF) 1 Page - Unisonic Technologies

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