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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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UT2321G-AE3-R Fiches technique(PDF) 1 Page - Unisonic Technologies |
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UT2321G-AE3-R Fiches technique(HTML) 1 Page - Unisonic Technologies |
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1 / 4 page  UNISONIC TECHNOLOGIES CO., LTD UT2321 Power MOSFET www.unisonic.com.tw 1 of 4 Copyright © 2015 Unisonic Technologies Co., Ltd QW-R502-249.F P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UT2321 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) < 55mΩ @ VGS=-4.5V, ID=-2.4A * RDS(ON) < 80mΩ @ VGS=-2.5V, ID=-2.0A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Gate 1.Source 3.Drain ORDERING INFORMATION Pin Assignment Ordering Number Package 1 2 3 Packing UT2321G-AE3-R SOT-23 S G D Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source MARKING |
Numéro de pièce similaire - UT2321G-AE3-R |
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Description similaire - UT2321G-AE3-R |
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