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UT2312G-AE3-R Fiches technique(PDF) 1 Page - Unisonic Technologies

No de pièce UT2312G-AE3-R
Description  N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  3 Pages
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Fabricant  UTC [Unisonic Technologies]
Site Internet  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT2312G-AE3-R Fiches technique(HTML) 1 Page - Unisonic Technologies

  UT2312G-AE3-R Datasheet HTML 1Page - Unisonic Technologies UT2312G-AE3-R Datasheet HTML 2Page - Unisonic Technologies UT2312G-AE3-R Datasheet HTML 3Page - Unisonic Technologies  
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UNISONIC TECHNOLOGIES CO., LTD
UT2312
Power MOSFET
www.unisonic.com.tw
1 of 3
Copyright © 2015 Unisonic Technologies Co., Ltd
QW-R502-205.F
5A, 20V N-CHANNEL
ENHANCEMENT MODE MOSFET
DESCRIPTION
The UT2312 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
FEATURES
* RDS(ON) < 33 mΩ @ VGS =4.5V, ID =5.0 A
* RDS(ON) < 40 mΩ @ VGS =2.5 V, ID =4.0 A
* Advanced trench process technology
* Excellent thermal and electrical capabilities
* High density cell design for ultra low on-resistance
SYMBOL
2.Gate
1.Source
3.Drain
ORDERING INFORMATION
Pin Assignment
Ordering Number
Package
1
2
3
Packing
UT2312G-AE3-R
SOT-23
S
G
D
Tape Reel
Note: Pin Assignment: G: Gate
D: Drain
S: Source
MARKING


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