2SK2751G-AL3-R datasheet(2/4 Pages) UTC

2 / 4 page

2SK2751

N-CHANNEL JFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R206-067.D



ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Gate-Drain Voltage

VGDS

-40

Drain Current

Gate Current

Allowable Power Dissipation

200

Channel Temperature

TCH

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (TA=25±3°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Gate-Drain Voltage

VGDS

IG=-100μA, VDS=0

-40

Gate-Source Cut-Off Voltage

VGSC

VDS=10V, ID=1μA

-3.5

Drain-Source Cut-Off Current

IDSS

VDS=10V, VGS=0

1.4

4.7

Gate-Source Leakage Current

IGSS

VGS=-20V, VDS=0

-1

Forward Transfer Admittance

| Yfs |

VDS=10V, VGS=0, f=1kHz

2.5

Input Capacitance (Common Source)

CISS

VDS=10V, VGS=0, f=1MHz

Output Capacitance (Common Source)

COSS

Reverse Transfer Capacitance

(Common Source)

CRSS

2SK2751G-AL3-R Fiches technique(PDF) 2 Page - Unisonic Technologies

2SK2751G-AL3-R Fiches technique(HTML) 2 Page - Unisonic Technologies

Html Pages

1 2 3 4

Fiches technique Télécharger

Lien URL