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DTB113ZG-AE3-R Fiches technique(PDF) 2 Page - Unisonic Technologies

No de pièce DTB113ZG-AE3-R
Description  DIGITAL TRANSISTOR
PDF  3 Pages
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Fabricant  UTC [Unisonic Technologies]
Site Internet  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

DTB113ZG-AE3-R Fiches technique(HTML) 2 Page - Unisonic Technologies

  DTB113ZG-AE3-R Datasheet HTML 1Page - Unisonic Technologies DTB113ZG-AE3-R Datasheet HTML 2Page - Unisonic Technologies DTB113ZG-AE3-R Datasheet HTML 3Page - Unisonic Technologies  
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DTB113Z
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R206-092.D
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Supply Voltage
VCC
-50
V
Input Voltage
VIN
-10 ~ +5
V
Output Current
IC
-500
mA
Power Dissipation
PD
200
mW
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Input Voltage
VIN(OFF)
VCC= -5V, IOUT= -100μA
-0.3
V
VIN(ON)
VOUT= -0.3V, IOUT= -20mA
-3
Output Voltage
VOUT(ON) IOUT/IIN= -50mA/-2.5mA
-0.3
V
Input Current
IIN
VIN=-5V
-7.2
mA
Output Current
IOUT(OFF) VCC=-50V, VIN=0V
-0.5
μA
DC Current Gain
hFE
VOUT=-5V, IOUT=-50mA
56
Input Resistance
R1
0.7
1
1.3
KΩ
Resistance Ratio
R2/R1
8
10
12
Transition Frequency
fT
VCE=-10V, IE= 50mA, f=100MHz(Note)
200
MHz
Note: Transition frequency of the device



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