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5302DG-AA3-R Fiches technique(PDF) 3 Page - Unisonic Technologies

No de pièce 5302DG-AA3-R
Description  HIGH VOLTAGE NPN TRANSISTOR
PDF  4 Pages
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Fabricant  UTC [Unisonic Technologies]
Site Internet  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

5302DG-AA3-R Fiches technique(HTML) 3 Page - Unisonic Technologies

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5302D
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
3 of 4
www.unisonic.com.tw
QW-R213-018. H
ABSOLUTE MAXIMUM RATING (TA=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
800
V
Collector-Emitter Voltage
VCEO
400
V
Emitter-Base Voltage
VEBO
10
V
Collector Current
IC
2
A
Collector Peak Current (tP<5ms)
ICM
4
A
Base Current
IB
1
A
Base Peak Current (tP<5ms)
IBM
2
A
TO-126
12.5
TO-92
1.6
TO-251/ TO-252
25
Power Dissipation (TC≤25°С)
SOT-223
PD
1
W
Junction Temperature
TJ
+150
°С
Storage Temperature
TSTG
-65 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
TO-126
122
TO-92
160
TO-251/ TO-252
100
Junction to Ambient
SOT-223
θJA
175
°С/W
TO-126
10
TO-92
80
TO-251/ TO-252
5
Junction to Case
SOT-223
θJC
125
°С/W
ELECTRICAL CHARACTERISTICS (TA = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
BVCEO
IC=10mA, IE=0 (Note)
400
V
Collector-Base Breakdown Voltage
BVCBO
IC=1mA, IB=0
800
V
Emitter-Base Breakdown Voltage
BVEBO
IE=1mA, IC=0
10
V
Collector Cutoff Current
ICBO
VCB=800V, IE=0
1
μA
Emitter Cutoff Current
IEBO
VEB=9V, IC=0
1
μA
ON CHARACTERISTICS
hFE1
VCE=5V, IC=10mA
10
hFE2
VCE=5V, IC=400mA
10
40
DC Current Gain
hFE3
VCE=5V, IC=1A
5
VCE(SAT1) IC=0.5A, IB=0.1A (Note)
0.5
Collector-Emitter Saturation Voltage
VCE(SAT2) IC=1A, IB=0.25A (Note)
1.1
1.5
V
VBE(SAT1) IC=0.5A, IB=0.1A (Note)
1.1
Base-Emitter Saturation Voltage
VBE(SAT2) IC=1A, IB=0.25A (Note)
1.2
V
SWITCHING CHARACTERISTICS
Turn On Time
tON
0.15
0.3
μS
Fall Time
tF
0.2
0.4
μS
Storage Time
tSTG
VCC=250V, IC=1A,
IB1=IB2=0.2A, tP=25uS
Duty Cycle<1%
0.5
0.9
μS
DIODE
Forward Voltage Drop
VF
IC=1A
1.4
V
Fall Time
tF
IC=1A
800
μS
Note: Pulsed duration = 300μS, Duty cycle≤2%



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