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UN1518G-AE3-R Fiches technique(PDF) 2 Page - Unisonic Technologies

No de pièce UN1518G-AE3-R
Description  POWER (SWITCHING) TRANSISTOR
PDF  3 Pages
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Fabricant  UTC [Unisonic Technologies]
Site Internet  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UN1518G-AE3-R Fiches technique(HTML) 2 Page - Unisonic Technologies

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UN1518
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R206-088.D
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise stated)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
20
V
Collector-Emitter Voltage
VCEO
20
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
Pulse (Note 2)
ICM
6
A
DC
IC
2.5
A
Base Current
IB
500
mA
Total Device Dissipation
PD
625
mW
Storage Temperature
TSTG
-50 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width=300ms. Duty cycle ≤2%
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
Collector-Base Breakdown Voltage
BVCBO IC=100µA
20
100
V
Collector-Emitter Breakdown Voltage
BVCEO IC=10mA (Note)
20
27
V
Emitter-Base Breakdown Voltage
BVEBO IE=100µA
5
8.3
V
Collector Cut-Off Current
ICBO
VCB=16V
100
nA
Emitter Cut-Off Current
IEBO
VEB=4V
100
nA
Collector Emitter Cut-Off Current
ICES
VCES=16V
100
nA
Collector-Emitter Saturation Voltage (Note) VCE(SAT)
IC=0.1A, IB=10mA
10
15
mV
IC=1A, IB=10mA
70
150
mV
IC=2.5A, IB=50mA
200
250
mV
Base-Emitter Saturation Voltage (Note)
VBE(SAT) IC=2.5A, IB=50mA
0.89
1.0
V
Base-Emitter Turn-On Voltage (Note)
VBE(ON) VCE=2V, IC=2.5A
0.79
1.0
V
DC Current Gain (Note)
hFE
VCE=2V, IC=10mA
200
400
VCE=2V, IC=200mA
300
450
VCE=2V, IC=2A
200
360
VCE=2V, IC=6A
100
180
Transition Frequency
fT
VCE=10V, IC=50mA, f=100MHz
100
140
MHz
Output Capacitance
COB
VCB=10V, f=1MHz
23
30
pF
Turn-On Time
t(ON)
VCC=10V, IC=1A IB1=-IB2=10mA
170
nS
Turn-Off Time
t(OFF)
400
nS
Note: Pulse width=300ms. Duty cycle ≤2%



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