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MAX771C/D Fiches technique(PDF) 16 Page - Maxim Integrated Products |
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MAX771C/D Fiches technique(HTML) 16 Page - Maxim Integrated Products |
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16 / 20 page ![]() The standard operating circuits use a 22µH inductor. If a different inductance value is desired, select L such that: VIN(max) x tON(min) L ≥ —————————— ILIM/ 2 Larger inductance values tend to increase the start-up time slightly, while smaller inductance values allow the coil current to ramp up to higher levels before the switch turns off, increasing the ripple at light loads. Inductors with a ferrite core or equivalent are recom- mended; powder iron cores are not recommended for use with high switching frequencies. Make sure the inductor’s saturation current rating (the current at which the core begins to saturate and the inductance starts to fall) exceeds the peak current rating set by RSENSE. However, it is generally acceptable to bias the inductor into saturation by approximately 20% (the point where the inductance is 20% below the nominal value). For highest efficiency, use a coil with low DC resistance, preferably under 20m Ω. To minimize radiated noise, use a toroid, a pot core, or a shielded coil. Table 2 lists inductor suppliers and specific recom- mended inductors. Power Transistor Selection Use an N-channel MOSFET power transistor with the MAX770/MAX771/MAX772 (Figure 8a). Use an N-FET whenever possible with the MAX773. An NPN transistor can be used, but be extremely careful when determining the base current (see NPN Transistors section). An NPN transistor is not recom- mended when using the shunt regulator. N-Channel MOSFETs To ensure the external N-channel MOSFET (N-FET) is turned on hard, use logic-level or low-threshold N-FETs when the input drive voltage is less than 8V. This applies even in bootstrapped mode, to ensure start-up. N-FETs provide the highest efficiency because they do not draw any DC gate-drive current, but they are typi- cally more expensive than NPN transistors. When using an N-FET with the MAX773, connect EXTH and EXTL to the N-FET’s gate (Figure 8b). When selecting an N-FET, three important parameters are the total gate charge (Qg), on resistance (rDS(ON)), and reverse transfer capacitance (CRSS). Qg takes into account all capacitances associated with charging the gate. Use the typical Qg value for best results; the maximum value is usually grossly over- specified since it is a guaranteed limit and not the mea- sured value. The typical total gate charge should be 50nC or less. With larger numbers, the EXT pins may not be able to adequately drive the gate. The EXT rise/fall time with various capacitive loads as shown in the Typical Operating Characteristics. 5V/12V/15V or Adjustable, High-Efficiency, Low IQ, Step-Up DC-DC Controllers 16 ______________________________________________________________________________________ MAX770 MAX771 MAX772 N EXT CS RSENSE MAX773 NPN EXTH EXTL CS L RSENSE RBASE IC(PEAK) IB Figure 8a. Use an N-Channel MOSFET with the MAX770/MAX771/MAX772 Figure 8b. Using an N-Channel MOSFET with the MAX773 Figure 8c. Using an NPN Transistor with the MAX773 MAX773 N EXTH EXTL CS L RSENSE |
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