BLF644P

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© NXP Semiconductors N.V. 2014. All rights reserved.

Product data sheet

Rev. 2 — 27 June 2014

9 of 12

NXP Semiconductors

BLF644P

Broadband power LDMOS transistor

9.

Handling information

10. Abbreviations

11. Revision history

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling

electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or

equivalent standards.

Table 10.

Abbreviations

Acronym

Description

CW

Continuous Wave

ESD

ElectroStatic Discharge

HF

High Frequency

LDMOS

Laterally Diffused Metal Oxide Semiconductor

LDMOST

Laterally Diffused Metal Oxide Semiconductor Transistor

MTF

Median Time to Failure

SMD

Surface Mounted Device

VSWR

Voltage Standing-Wave Ratio

Table 11.

Revision history

Document ID

Release date

Data sheet status

Change notice

Supersedes

BLF644P v.2

20140627

Product data sheet

-

BLF644P v.1

Modifications

• Section 1.1 on page 1: added ‘communications’ to the description

• Section 1.2 on page 1: added bullet ‘broadcast transmitters’

• Table 1 on page 1: table has been updated

• Table 4 on page 2: table has been updated

• Table 6 on page 3: table has been updated

• Table 8 on page 3: table has been updated

• Section 7.1 on page 3: value frequency changed from 1300 MHz to 860 MHz

• Section 7.2 on page 4: section has been added

• Section 7.3 on page 6: section has been added

BLF644P v.1

20130611

Objective data sheet

-

-